Post on 16-Dec-2015
1 NIKHEF 28 JAN 2013
Centre Nacional de Microelectrònica (IMB-CNM)
Institut de Física d’Altes Energies(IFAE)
Enric Cabruja (IMB-CNM)Manuel Lozano (IMB-CNM)Thorsten Lux (IFAE)
2 NIKHEF 28 JAN 2013
Centro Nacional de Microelectrónica
Instituto de Microelectrónica de Barcelona
2012 Budget: 11,5 M€External funding: 49,4 %
Project funding splitting: EU FP: 26 % National (includes Eur. JTI): 40 % Industrial contracts: 35 %
3 NIKHEF 28 JAN 2013
idea
product
CNM covers all the Value Chain
Strategic vs Pragmatic
Long term vs short term
Top down vs bottom-up
Industrial (partic. SMEs) weight balance in the
consortium
R&D Value Chain at CNM
4 NIKHEF 28 JAN 2013
IMB-CNM Structure
Micro & Nanosystems Department
Systems Integration
Department
ICTS: Micro & Nanointegration Clean Room
5 NIKHEF 28 JAN 2013
Main Clean Room• 1,500 m2 Class 100-10,000• CMOS integrated circuits• Microsystems technologies• Nanolithography and
nanofabrication
Back-end Clean Room• 40 m2 Class 1000• Chip packaging• High Density FlipChip
Integrated Micro and Nano Fabrication Clean Room
6 NIKHEF 28 JAN 2013
• Microsystems / Sensors Characterization• General Chemistry / Chemical Transducers• Biochemical Systems characterization• Chemical Transducers• Integrated Optics• Power Circuits and Systems characterization• Thermal reliability• Integrated Circuits and systems• Advanced packaging• Radiation Detectors• Reverse Engineering• Integrated Optics• SAM/SEM• Prototyping• 3D Rapid Manufacturing
Research & Application Laboratories
7 NIKHEF 28 JAN 2013
MICRO & NANO INTEGRATED SYSTEMS
IMB-CNM Research Focus
Food and Environment
Health
Energy
8 NIKHEF 28 JAN 2013
• People– 3 permanent doctors– 2 contracted doctors– 4 PhD students– 2 Engineer
• Activities started in 1996
• Experiments– Members of the RD50 CERN Collaboration– ATLAS, ATLAS upgrade (sLHC)– GRI (Gamma Radiation Imager)
Radiation Detectors group
9 NIKHEF 28 JAN 2013
• Silicon radiation detectors– Layout design, simulation, fabrication,
characterization– Pad, strip and pixel designs– P-in-N, N-in-P and N-in-N technologies
developed– Silicon oxigenation
• 3D detectors– Electrodes deep into silicon bulk– Low full depletion voltage
• Pad pitch adaptors for detector modules
– ATLAS-SCT Forward Modules
• Medical imaging– X-ray radiation pixel detectors– DEAR-MAMA European Project– Real time stereotactic biopsy– Complete pre-industrial system
• Hardware, software, and chip design
• Radiation effects on devices and materials– Thin dielectrics for submicronic
technologies– Silicon radiation detectors– MOS, BiCMOS and bipolar devices
• High density bump bonding– Fine pitch by electrodeposition– For image devices
Activities in Radiation Detectors
10 NIKHEF 28 JAN 2013
• Technologies:– P-on-N, N-on-P, N-on-N– Pad, strip and pixels detectors– High resistivity poly, capacitive coupling, two metal layers, two
side processing– Limited to 4 inches wafers– Radiation hard devices: Oxygenated FZ and magnetic Czochralski
silicon.
N-in-N
N
N+
P+
Guard ring
P+ implant
Detector design and fabrication
11 NIKHEF 28 JAN 2013
• Sentaurus (Synopsys)• Technology simulation• Electrical simulation
– Static and dinamic– Charge collection in 3D
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,51E9
1E10
1E11
1E12
1E13
1E14
1E15
1E16
1E17
1E18
1E19
1E20
1E21
Con
cent
ratio
n(cm
-3)
Distance(m)
Measurement Net concentration Boron concentration (after Annealing) Boron concentration (before Annealing)
Boron:Implantation energy=50KeV
Dose=4.2 *1015cm-3
P-N diodes
0,00 2,50x10-8 5,00x10-8 7,50x10-8 1,00x10-7 1,25x10-7 1,50x10-7 1,75x10-7 2,00x10-7
10-10
10-9
10-8
10-7
10-6
Distance from back contact 100m 500m 900m
To
tal C
urr
en
t (A
)
Time(s)
Total current on pixel 5CdTe 1mm thickCharge generated at t=1e-9s
Detector simulation
12 NIKHEF 28 JAN 2013
• DearMama project: digital mammography system
• Pixel silicon detectors fabricated at CNM• We investigated the use of CdTe from
Acrorad. • Use of Medipix2 chip
Detectors for x-ray imaging
Fabricated at CNM Read-Out at IFAE
13 NIKHEF 28 JAN 2013
• In collaboration with IFAE• Bump bonding already working• Medipix and ATLAS pixels successfully bonded• Now working to increase yield and qualify the
technology• SET/Süss FC150 machine• 1 micron placing accuracy• In-situ reflow
Bump Bonding Hybridization
14 NIKHEF 28 JAN 2013
• 1996: start of IFIC-CNM collaboration
• 1998: first detector fabrication (simple diodes)
• 1999: silicon oxygenation technology
• 2000: P-on-N pad detectors (RH 1x1015 cm-2)
• 2002: P-on-N & N-on-P strip detectors (RH 5x1015 cm-2)
• 2003: Signature of contract with CERN for pitch adaptors
production at CNM clean room for ATLAS End-Cap SCT
• 2003: N-on-N strip detectors (double-side processing) (RH
5x1015 cm-2)
• 2005: MCz strip detectors (RH 1x1016 cm-2)
• 2005: End of ATLAS fanins production at CNM’s Clean Room
• 2006: Moderated p-spray N-on-P strip detectors• 2007: Mammography System• 2007: Pixel detectors• 2008: 3D detectors technology• 2008: ALiBaVa System development• 2009: Ultra-thin 3D detectors• 2009: Proposal of SiGe tech for FE• 2010: Neutron detectors• 2010: Edgeless detectors• 2010: Evaluation of LDMOS• 2011: Transparent detectors for alignment• 2011: Signature of contract with CERN for the fabrication of
1/3 IBL of pixel 3D sensors together with FBK
Achievements
15 NIKHEF 28 JAN 2013
• Pitch adaptor production– 10,000 pieces for ATLAS Inner Detector Endcaps in
three years– The biggest commercial contract of IMB-CNM/D+T– WE contracted new technicians working only for
this production– Good experience
Some examples: ATLAS pitch adaptors
16 NIKHEF 28 JAN 2013
• Material– Silicon doping: n-type– Thickness: 800 microns– Resistivity: between 20 and 30 kOhm·cm
• Electrode structures– Electrodes formed to run orthogonally on both sides of the silicon.– Electrode strip length: ~ 4 cm– Electrode strip pitch: 500 µm– Electrode strip width: 400 µm– Interstrip gap: 100 µm– Electrode strip material: End of strip connection suitable for wire bonding.– Number of strips: 64 on each side (total 128)– Guard ring: Multiple guard ring structures >= 1mm wide with channel stoppers– Signal coupling: DC
• Performance– Leakage current < 12 nA/cm2 at 20°C – Gettering process to reduce leakage current: Yes
• Samples delivered– D+T will process at least 10 wafers to ensure at least 7 working detectors.– The detectors will be delivered cut.
n+p
n-
p+
Al SiO2
Passivation
SiO2Passivation
n+p
n-
p+
Al SiO2
Passivation
SiO2Passivation
Some examples: Double Side Detectors
17 NIKHEF 28 JAN 2013
Some examples: Double Side Detectors
18 NIKHEF 28 JAN 2013
• Double sided 3D technology developed at CNM-Barcelona
– Holes are etched from both sides– Reduction of stress– Simplification of fabrication process
• Not compatible with thin wafers– Support wafer ca not be used
• Complete process at our Clean Room– Second demonstration of 3D feasibility after
Stanford
• 3D pixel detectors for Insertable B-layer for ATLAS
• Current manufacturers: (Stanford+Sintef), FBK, CNM
• Good results proved with Medipix2 chips• Atlas chips under study
Passivation
n+ doped
55um pitch
50-0um
300-2
50ump- type substrate
p+ doped
10um
Oxide0.4um1um
p+ doped
Metal
Poly 3um
OxideMetal
P-stop p+
50-0um TEOS 2um
5um
Some examples: 3D pixel detectors
19 NIKHEF 28 JAN 2013
1) Process backside of thick detector wafer (structured) implant.
2) Bond detector wafer on handle wafer.
3) Thin detector wafer to desired thickness (grinding & etching).
4) Process front side of the detector wafer in a standard (single sided) process line.
5) Etch handle wafer. If necessary: add Al-contacts. Leave frame for stiffening and handling, if wanted
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
Some examples: Thin detectors using SOI wafers
Gas Detector R&D at IFAE
T. Lux
21 NIKHEF 28 JAN 2013
2005: Start R&D efforts for a MPGD TPC for T2KEuropean GEM collaboration: UniGe, IFIC, INFN Bari, IFAE
13/12/2012 21Thorsten Lux (IFAE/UAB) 21/19
• 2 GEM tower• 3 GEM each• ~20x24 cm2• also small setup at IFAE
T2K: MPGD Detector R&D
22 NIKHEF 28 JAN 20132213/12/2012
• IFAE participated in setting up testbench• characterization of ~ 90 MM modules• ~12 m2 readout area• nowadays focus on analysis
T2K: MPGD Detector R&D
23 NIKHEF 28 JAN 2013
Electroluminescence Detector R&D
13/12/2012 23
Started for a double beta experiment in 2005 Set up a high pressure gas system at IFAE First stage: small chamber with 5 APDs Allowed to develop readout electronics Excellent energy resolution achieved Low threshold possible
(8.2 ± 0.1)% FWHM
xenon
23
24 NIKHEF 28 JAN 2013
13/12/2012 24
• Larger chamber with 25 APDs• Pressure up-to 5 bar• Focus on tracking
EL Detector R&D
27 NIKHEF 28 JAN 2013
• Granted Spanish project: Openning a new line in gaseous detectors
• Proposal submitted to Qatar Foundation: Collaboration with a group in Qatar??
• Collaboration with all of you???
Present and Future
28 NIKHEF 28 JAN 2013
Thanks for your attention!